BSIM4 Model Updated: A new 4.6.1 version of BSIM4 has been incorporated in the ICAP/4Windows software family.
Intusoft’s collection of BSIM MOSFET and EKV models are advantageous for the simulation of ICs and low-voltage/current analog and mixed-signal design using submicron CMOS technology.

Compared with BSIM version 4.6.0, several new features are added in this version.

1) New material model is introduced for the predictve modeling of Non-SiO2
insulator, Non-Poly Silicon gate and Non-silicon channel.
- The following new parameters are added
MTRLMOD : New material model selector
PHIG, EPSRGATE : non-poly silicon gate parameters
EOT, VDDEOT : non-SiO2 gate dielectric
EASUB, EPSRSUB, NI0SUB, BG0SUB, TBGASUB, TBGBSUB, ADOS, BDOS :
Non-silicon channel parameters

2) Mobility model (MOBMOD = 0 and MOBMOD = 1) has been improved through predictive modeling of vertical electric field.
The improved mobility model is selected through MTRLMOD = 1 for backward compatibility.

3) GIDL/GISL models are improved through an improved definition of flatband voltages at S/D ends.
The improved GISL/GIDL model is selected through MTRLMOD = 1 for backward compatibility.

4) Poly-depletion model is modified to account for new gate and gate-insulator materials.

5) C-V model has been improved by adding a new VgsteffCV definition through
CVCHARGEMOD = 1
- 6 new parameters have been added: CVCHARGEMOD, MINVCV, LMINVCV, WMINCV, PMINVCV and VOFFCVL